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HMC457QS16G Datasheet

  • HMC457QS16G

  • InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz

  • 10頁

  • HITTITE

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v00.0904
HMC457QS16G
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
Features
Output IP3: +46 dBm
Gain: 27 dB @ 1900 MHz
48% PAE @ +32 dBm Pout
+25 dBm W-CDMA Channel Power
@ -50 dBc ACPR
Integrated Power Control (Vpd)
QSOP16G SMT Package: 29.4 mm
2
8
AMPLIFIERS - SMT
Typical Applications
The HMC457QS16G is ideal for applications requiring
a high dynamic range ampli鏗乪r:
鈥?CDMA & W-CDMA
鈥?GSM, GPRS & Edge
鈥?Base Stations & Repeaters
Functional Diagram
General Description
The HMC457QS16G is a high dynamic range
GaAs InGaP Heterojunction Bipolar Transistor
(HBT) 1 watt MMIC power ampli鏗乪r operating
between 1.7 and 2.2 GHz. Packaged in a miniature
16 lead QSOP plastic package, the ampli鏗乪r gain
is typically 27 dB from 1.7 to 2.0 GHz and 25 dB
from 2.0 to 2.2 GHz. Utilizing a minimum number of
external components, the ampli鏗乪r output IP3 can
be optimized to +45 dBm. The power control (Vpd)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE makes
the HMC457QS16G an ideal power ampli鏗乪r for
Cellular/3G base station & repeater applications.
Electrical Speci鏗乧ations,
T
A
= +25擄C, Vs= +5V, Vpd = +5V, Vbias = +5V (note 1)
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3) (note 2)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Bias Current (Vbias)
42
26
24
Min.
Typ.
1710 - 1990
27
0.025
11
8
29
32.5
45
6
500
4
10
42
27.5
0.035
22
Max.
Min.
Typ.
2010 - 2170
25
0.025
11
5
30.5
32
45
5
500
4
10
0.035
Max.
Units
MHz
dB
dB / 擄C
dB
dB
dBm
dBm
dBm
dB
mA
mA
mA
Note 1: Speci鏗乧ations and data re鏗俥ct HMC457QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing.
8 - 300
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC457QS16G 產(chǎn)品屬性

  • 0現(xiàn)貨

  • 停產(chǎn)

  • -

  • 帶

  • 停產(chǎn)

  • 1.7GHz ~ 2.2GHz

  • 29dBm

  • 27dB

  • 6dB

  • 通用

  • 5V

  • 500mA

  • 1.9GHz

  • 表面貼裝型

  • 16-SSOP（0.154"，3.90mm 寬）裸露焊盤

  • 16-QSOP-EP

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