v01.0604
MICROWAVE CORPORATION
HMC455LP3
InGaP HBT 錕?frac12; Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
Features
Output IP3: +42 dBm
Gain: 13 dB
56% PAE @ +28 dBm Pout
+19 dBm W-CDMA Channel Power @ -45 dBc ACP
3 x 3 x 1 mm QFN SMT Package
8
AMPLIFIERS - SMT
Typical Applications
This ampli鏗乪r is ideal for high linearity applications:
鈥?Multi-Carrier Systems
鈥?GSM, GPRS & EDGE
鈥?CDMA & WCDMA
鈥?PHS
Functional Diagram
General Description
The HMC455LP3 is a high output IP3 GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
錕?frac12; watt MMIC ampli鏗乪r operating between 1.7
and 2.5 GHz. Utilizing a minimum number of
external components the ampli鏗乪r provides 13
dB of gain and +28 dBm of saturated power at
56% PAE from a single +5 Vdc supply voltage.
The high output IP3 of +42 dBm coupled with
the low VSWR of 1.4:1 makes the HMC455LP3
an ideal driver ampli鏗乪r for PCS/3G wireless
infrastructure. A low cost, leadless 3x3 mm QFN
surface mount package (LP3) houses the linear
ampli鏗乪r. The LP3 provides an exposed base for
excellent RF and thermal performance.
Electrical Speci鏗乧ations,
T
A
= +25擄 C, Vs= +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
37
24
11.5
Min.
Typ.
1.7 - 1.9
13.5
0.012
13
10
27
28.5
40
7
150
39
24.5
0.02
10.5
Max.
Min.
Typ.
1.9 - 2.2
13
0.012
15
18
27.5
28
42
6
150
37
23
0.02
9
Max.
Min.
Typ.
2.2 - 2.5
11.5
0.012
10
15
26
27
40
6
150
0.02
Max.
Units
GHz
dB
dB / 擄C
dB
dB
dBm
dBm
dBm
dB
mA
8 - 264
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com