v01.0503
MICROWAVE CORPORATION
HMC435MS8G
SPDT NON-REFLECTIVE
SWITCH, DC - 4.0 GHz
Features
High Isolation: 60 dB @ 1 GHz
50 dB @ 2 GHz
Positive Control: 0/+5V
51 dBm Input IP3
Non-Re鏗俥ctive Design
MS8G SMT Package, 14.8 mm
2
Typical Applications
The HMC435MS8G is ideal for:
鈥?Basestation Infrastructure
鈥?MMDS & 3.5 GHz WLL
鈥?CATV/CMTS
鈥?Test Instrumentation
Functional Diagram
General Description
The HMC435MS8G is a non-re鏗俥ctive DC to 4
GHz GaAs MESFET SPDT switch in a low cost
8 lead MSOP8G surface mount package with an
exposed ground paddle. The switch is ideal for
cellular/PCS/3G basestation applications yielding
50 to 60 dB isolation, low 0.8 dB insertion loss and
+50 dBm input IP3. Power handling is excellent
up through the 3.5 GHz WLL band with the switch
offering a P1dB compression point of +31 dBm.
On-chip circuitry allows positive voltage control of
0/+5 Volts at very low DC currents.
14
SWITCHES - SMT
Electrical Speci鏗乧ations,
T
A
= +25擄 C, Vctl = 0/+5 Vdc, 50 Ohm System
Parameter
Frequency
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
0.5 - 4.0 GHz
0.5 - 4.0 GHz
0.5 - 1.0 GHz
0.5 - 2.5 GHz
0.5 - 4.0 GHz
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
40
60
ns
ns
56
46
43
37
30
15
13
11
16
27
48
45
41
Min.
Typ.
0.8
1.2
1.5
60
50
47
41
35
20
17
15
21
31
51
48
45
Max.
1.0
1.5
1.8
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
Insertion Loss
Isolation (RFC to RF1/RF2)
Return Loss (On State)
Return Loss (Off State)
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Speed
dBm
14 - 230
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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