v02.1202
MICROWAVE CORPORATION
HMC414MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Features
Gain: 20 dB
Saturated Power: +30 dBm
32% PAE
Supply Voltage: +2.75V to +5.0 V
Power Down Capability
Low External Part Count
8
AMPLIFIERS - SMT
Typical Applications
This ampli鏗乪r is ideal for use as a power
ampli鏗乪r for 2.2 - 2.7 GHz applications:
鈥?BLUETOOTH
鈥?MMDS
Functional Diagram
General Description
The HMC414MS8G is a high ef鏗乧iency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power ampli鏗乪r which operates between
2.2 and 2.8 GHz. The ampli鏗乪r is packaged in
a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external com-
ponents, the ampli鏗乪r provides 20 dB of gain,
+30 dBm of saturated power at 32% PAE from
a +5.0V supply voltage. The ampli鏗乪r can also
operate with a 3.6V supply. Vpd can be used for
full power down or RF output power/current con-
trol.
Electrical Speci鏗乧ations,
T
A
= +25擄 C, As a Function of Vs, Vpd = 3.6V
Vs = 3.6V
Parameter
Min.
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V / 3.6V
Vpd = 3.6V
tON, tOFF
30
21
17
Typ.
2.2 - 2.8
20
0.03
8
9
25
27
35
6.5
0.002 / 240
7
45
35
23
25
0.04
17
Max.
Min.
Typ.
2.2 - 2.8
20
0.03
8
9
27
30
39
7.0
0.002 / 300
7
45
25
0.04
Max.
Units
GHz
dB
dB/ 擄C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
Vs = 5.0V
8 - 174
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com