MICROWAVE CORPORATION
v02.0604
HMC408LP3
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
Features
Gain: 20 dB
Saturated Power: +32.5 dBm @ 27% PAE
Single Supply Voltage: +5.0 V
Power Down Capability
3x3 mm Leadless SMT Package
8
AMPLIFIERS - SMT
Typical Applications
The HMC408LP3 is ideal for:
鈥?802.11a & HiperLAN WLAN
鈥?UNII & Pt-Pt / Multi-Pt. Radios
鈥?Access Point Radios
Functional Diagram
General Description
The HMC408LP3 is a 5.1 - 5.9 GHz high ef鏗?
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) Power Ampli鏗乪r MMIC which offers
+30 dBm P1dB. The ampli鏗乪r provides 20 dB of
gain, +32.5 dBm of saturated power, and 27%
PAE from a +5.0V supply voltage. The input is
internally matched to 50 Ohms while the output
requires a minimum of external components.
Vpd can be used for full power down or RF output
power/current control. The ampli鏗乪r is packaged
in a low cost, 3x3 mm leadless surface mount
package with an exposed base for improved RF
and thermal performance.
Electrical Speci鏗乧ations,
T
A
= +25擄 C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss*
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Harmonics, Pout= 30 dBm, F= 5.8 GHz
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd= 0V/5V
Vpd= 5V
tOn, tOff
2 fo
3 fo
40
Icq= 750 mA
Icq= 500 mA
27
17
Min.
Typ.
5.7 - 5.9
20
0.045
8
14
30
27
32.5
43
-50
-90
6
0.002 / 750
14
50
36
24
0.055
17
Max.
Typ.
5.1 - 5.9
20
0.045
8
6
27
23
31
39
-50
-90
6
0.002 / 750
14
50
0.055
Max.
Units
GHz
dB
dB/擄C
dB
dB
dBm
dBm
dBm
dBc
dBc
dB
mA
mA
ns
* Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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