v01.1202
MICROWAVE CORPORATION
HMC407MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 7.0 GHz
Features
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5.0 V
Power Down Capability
No External Matching Required
8
AMPLIFIERS - SMT
Typical Applications
This ampli鏗乪r is ideal for use as a power
ampli鏗乪r for 5.0 - 7.0 GHz applications:
鈥?UNII
鈥?HiperLAN
Functional Diagram
General Description
The HMC407MS8G is a high ef鏗乧iency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power ampli鏗乪r which operates between
5 and 7 GHz. The ampli鏗乪r requires no external
matching to achieve operation and is thus truly 50
Ohm matched at input and output. The ampli鏗乪r
is packaged in a low cost, surface mount 8 leaded
package with an exposed base for improved RF
and thermal performance. The ampli鏗乪r provides
15 dB of gain, +29 dBm of saturated power at
28% PAE from a +5.0V supply voltage. Power
down capability is available to conserve current
consumption when the ampli鏗乪r is not in use.
Electrical Speci鏗乧ations,
T
A
= +25擄 C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V/5V
Vpd = 5V
tON, tOFF
32
21
10
Min.
Typ.
5.0 - 7.0
15
0.025
12
15
25
29
37
5.5
0.002 / 230
7
30
36
22
18
0.035
12
Max.
Min.
Typ.
5.6 - 6.0
15
0.025
12
15
25
29
40
5.5
0.002 / 230
7
30
18
0.035
Max.
Units
GHz
dB
dB/ 擄C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
8 - 150
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com