v02.1202
MICROWAVE CORPORATION
HMC406MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
Features
Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count
8
AMPLIFIERS - SMT
Typical Applications
This ampli鏗乪r is ideal for use as a driver
ampli鏗乪r for 5.0 - 6.0 GHz applications:
鈥?UNII
鈥?HiperLAN & 802.11a WLAN
Functional Diagram
General Description
The HMC406MS8G is a high ef鏗乧iency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power ampli鏗乪r which operates between
5.0 and 6.0 GHz. The ampli鏗乪r is packaged in a
low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external com-
ponents, the ampli鏗乪r provides 17 dB of gain and
+29 dBm of saturated power at 38% PAE from
a +5.0V supply voltage. Vpd can be used for full
power down or RF output power/current control.
Electrical Speci鏗乧ations,
T
A
= +25擄 C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V/5V
Vpd = 5V
tON, tOFF
34
21
13
Min.
Typ.
5.0 - 6.0
16
0.03
10
8
24
27
38
6.0
0.002 / 300
7
35
34
24
21
0.04
14
Max.
Min.
Typ.
5.7 - 5.9
17
0.03
11
9
27
29
38
6.0
0.002 / 300
7
35
21
0.04
Max.
Units
GHz
dB
dB/ 擄C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
8 - 142
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com