v02.0202
MICROWAVE CORPORATION
HMC358MS8G
MMIC VCO w/ BUFFER
AMPLIFIER, 5.8 - 6.8 GHz
Features
Pout: +11 dBm
Phase Noise: -110 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 100 mA
15mm
2
MSOP8G SMT Package
Typical Applications
Low noise MMIC VCO w/Buffer Ampli鏗乪r
for C-Band applications such as:
鈥?UNII & Pt. to Pt. Radios
鈥?802.11a & HiperLAN WLAN
鈥?VSAT Radios
Functional Diagram
General Description
The HMC358MS8G is a GaAs InGaP Hetero-
junction Bipolar Transistor (HBT) MMIC VCO. The
HMC358MS8G integrates a resonator, negative
resistance device, varactor diode, and buffer
ampli鏗乪r. The VCO鈥檚 phase noise performance is
excellent over temperature, shock, and process
due to the oscillator鈥檚 monolithic structure. Power
output is 11 dBm typical from a 3.0V supply volt-
age. The voltage controlled oscillator is packaged
in a low cost, surface mount 8 lead MSOP pack-
age with an exposed base for improved RF and
thermal performance.
15
VCOs - SMT
Electrical Speci鏗乧ations,
T
A
= +25擄 C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc)
Tune Port Leakage Current (Vtune= 10V)
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +3V
Frequency Drift Rate
9
0
100
10
8
Min.
Typ.
5.8 - 6.8
11
-110
10
Max.
Units
GHz
dBm
dBc/Hz
V
mA
碌A(chǔ)
dB
-10
-20
10
150
0.8
dB
dB
MHz pp
MHz/V
MHz/擄C
15 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com