v00.0304
MICROWAVE CORPORATION
HMC349LP4C
Features
High Isolation: 67 dB @ 1 GHz
62 dB @ 2 GHz
Single Positive Control: 0/+5V
+52 dBm Input IP3
Non-Re鏗俥ctive Design
All Off State
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 4.0 GHz
Typical Applications
The HMC349LP4C is ideal for:
鈥?Basestation Infrastructure
鈥?MMDS & 3.5 GHz WLL
鈥?CATV/CMTS
鈥?Test Instrumentation
Functional Diagram
16 mm
2
Leadless QFN SMT Package
General Description
The HMC349LP4C is a high isolation non-
re鏗俥ctive DC to 4 GHz GaAs MESFET SPDT
switch in a low cost leadless surface mount
package. The switch is ideal for cellular/PCS/3G
basestation applications yielding 60 to 65 dB
isolation, low 0.9 dB insertion loss and +52 dBm
input IP3. Power handling is excellent up through
the 3.5 GHz WLL band with the switch offering a
P1dB compression point of +31 dBm. On-chip
circuitry allows a single positive voltage control
of 0/+5 Volts at very low DC currents. An enable
input (EN) set to logic high will put the switch in
an 鈥渁ll off鈥?state.
14
SWITCHES - SMT
Electrical Speci鏗乧ations,
T
A
= +25擄 C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
DC - 1.0 GHz
DC - 4.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.5 - 4.0 GHz
0.25 - 4.0 GHz
0.25 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
50
120
ns
ns
27
60
55
Min.
Typ.
0.9
1.0
1.2
1.4
67
62
20
15
13
15
31
52
50
49
46
Max.
1.2
1.3
1.5
1.7
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
Insertion Loss
Isolation (RFC to RF1/RF2)
Return Loss (On State)
Return Loss (Off State)
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Speed
14 - 224
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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