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v02.0703

MICROWAVE CORPORATION

HMC313

Features

P1dB Output Power: +14 dBm

Output IP3: +27 dBm

Gain: 17 dB

Single Supply: +5V

High Reliability GaAs HBT Process

Ultra Small Package: SOT26

GaAs InGaP HBT MMIC BROADBAND

AMPLIFIER GAIN BLOCK, DC - 6.0 GHz

8

AMPLIFIERS - SMT

Typical Applications

Ideal as a Driver & Ampli鏗乪r for:

鈥?2.2 - 2.7 GHz MMDS

鈥?3.5 GHz Wireless Local Loop

鈥?5.0 - 6.0 GHz UNII & HiperLAN

Functional Diagram

General Description

The HMC313 is a GaAs InGaP Heterojunction

Bipolar Transistor (HBT) MMIC ampli鏗乪r that

operates from a single Vcc supply. The surface

mount SOT26 ampli鏗乪r can be used as a

broadband gain stage or used with external

matching for optimized narrow band applications.

With Vcc biased at +5V, the HMC313 offers 17 dB

of gain and +15 dBm of saturated power while only

requiring 50 mA of current. The 鈥淗MC313 Biasing

and Impedance Matching Techniques鈥?application

note available within the 鈥淎pplication Notes鈥?section

offers recommendations for narrow band operation.

Electrical Speci鏗乧ations,

T

A

= +25 擄C

Vcc = +5V

Parameter

Min.

Frequency Range

Gain

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

Reverse Isolation

Output Power for 1 dB Compression (P1dB) @ 1.0 GHz

Saturated Output Power (Psat) @ 1.0 GHz

Output Third Order Intercept (IP3) @ 1.0 GHz

Noise Figure

Supply Current (Icc)

24

11

14

Typ.

DC - 6

17

0.02

7

6

30

14

15

27

6.5

50

20

0.03

Max.

GHz

dB

dB/擄C

dB

dB

dB

dBm

dBm

dBm

dB

mA

Units

8 - 68

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

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