v04.1201
MICROWAVE CORPORATION
HMC283LM1
SMT MEDIUM POWER GaAs MMIC
AMPLIFIER, 17 - 40 GHz
Features
SMT mmWave Package
Psat Output Power: +21 dBm
High Gain: 21 dB
No External Matching Required
8
AMPLIFIERS - SMT
Typical Applications
The HMC283LM1 is ideal for:
鈥?Millimeterwave Point-to-Point Radios
鈥?LMDS
鈥?SATCOM
Functional Diagram
General Description
The HMC283LM1 is a Medium Power Ampli鏗乪r (MPA)
in a SMT leadless chip carrier package covering 17 to
40 GHz. The LM1 is a true surface mount broadband
millimeterwave package offering low loss & excellent
I/O match preserving MMIC chip performance. Utilizing
a GaAs PHEMT process, the device offers 20 dB gain
and +21 dBm ouput power from a bias supply of +3.5V
@ 300mA. As an alternative to chip-and-wire hybrid
assemblies the HMC283LM1 eliminates the need for
wirebonding, thereby providing a consistent connec-
tion interface for the customer. The ampli鏗乪r may be
used as a frequency doubler. A built-in-test pad (Vdet)
allows monitoring of microwave output power. All data
is with the non-hermetic, epoxy sealed LM1 packaged
MPA device mounted in a 50 ohm test 鏗亁ture.
Electrical Speci鏗乧ations,
T
A
= +25擄 C, Vdd= +3.5V*, ldd = 300 mA
Parameter
Frequency Range
Gain
Gain Variation over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
6
4
30
14
17
22
15
Min.
Typ.
17 - 40
20
0.05
10
7
40
18
21
27
10
300
330
0.07
6
4
35
14
17
21
17
Max.
Min.
Typ.
21 - 30
22
0.05
12
8
45
18
21
27
10
300
330
0.07
Max.
Units
GHz
dB
dB/擄C
dB
dB
dB
dBm
dBm
dBm
dB
mA
*Vdd = +3.5V, adjust Vgg = Vgg1, Vgg2 between -2.0 to +0.4V to achieve Idd = 300 mA typical.
8 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com