MICROWAVE CORPORATION
HMC282
V
01.0700
GaAs MMIC LOW NOISE AMPLIFIER 36 - 40 GHz
F
EBRUARY
2001
Features
NOISE FIGURE: 3.5 dB
General Description
The HMC282 chip is a four stage GaAs MMIC
Low Noise Amplifier (LNA) which covers the
frequency range of 36 to 40 GHz. The chip can
easily be integrated into Multi-Chip Modules
(MCMs) due to its small (2.30 mm
2
) size. The
chip utilizes a GaAs PHEMT process offering 26
dB gain from a bias supply of +3.5V @ 90 mA with
a noise figure of 3.5 dB. This LNA can be used in
millimeterwave point-to-point radios, VSAT, and
other SATCOM applications. All data is with the
chip in a 50 ohm test fixture connected via ribbon
bonds of minimal length. The HMC282 may be
used in conjunction with the HMC259 mixer to
realize a millimeterwave system receiver.
1
A
MPLIFIERS
DIE
STABLE GAIN vs. TEMPERATURE: 26dB 鹵 1.2dB
SMALL SIZE: 1.11 mm x 2.07 mm
IDEAL FOR 38 GHz RADIOS, E1 & T1
Guaranteed Performance,
Parameter
Frequency Range
Gain
Gain Flatness (Any 1Ghz BW)
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Voltage (Vdd)
Gate Bias Voltage (Vg1, 2 & Vg3, 4)
Supply Current (Idd)
(Vdd = +3.5V, Vg1, 2, 3, 4 = -0.15V Typ.)
Vdd = +3.5V*, Idd = 90mA, -55 to +85 deg C
Min.
Typ.
36 - 40
21
27
鹵1
3.8
7
5
40
5
46
9
12
18
3.25
25
3.5
-0.45 / -0.3
90
140
3.75
21
3.25
40
5
5.8
21
Max.
Min.
Typ.
37 - 39
26
鹵1
3.5
6
5
46
9
12
27
3.5
-0.45 / -0.3
90
140
3.75
5.3
Max.
Units
GHz
dB
dB
dB
dB
dB
dB
dB m
dB m
dB m
V dc
V dc
mA
* Vdd = +3.5V , adjust Vg1, 2 & Vg3, 4 between-2.0 to +0.4V to achieve Idd = 90 mA typical.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
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