MICROWAVE CORPORATION
HMC281
V
02.0500
GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz
F
EBRUARY
2001
Features
EXCELLENT NOISE FIGURE: 2.5 dB
General Description
The HMC281 chip is a three stage GaAs MMIC
Low Noise Amplifier (LNA) which covers the
frequency range of 18 to 32 GHz. The chip can
easily be integrated into Multi-Chip Modules
(MCMs) due to its small (1.62 mm
2
) size. The
chip utilizes a GaAs PHEMT process offering 22
dB gain from a bias supply of +3.5V @ 60mA with
a noise figure of 2.5 dB. This LNA can be used in
millimeterwave point-to-point radios, LMDS,
VSAT, and other SATCOM applications. All data
is with the chip in a 50 ohm test fixture connected
via ribbon bonds of minimal length. The HMC281
may be used in conjunction with HMC143,
HMC203, HMC258, HMC264, or HMC265 mix-
ers to realize a microwave or millimeterwave
system receiver.
1
STABLE GAIN vs. TEMPERATURE: 22 dB 鹵 2 dB
A
MPLIFIERS
DIE
WIDEBAND PERFORMANCE: 18 - 32 GHz
SMALL SIZE: 0.97 mm x 1.67 mm
Guaranteed Performance,
Parameter
Frequency Range
Gain
Gain Flatness (Any 1Ghz BW)
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Voltage (Vdd1, 2, 3)
Gate Bias Voltage (Vg1 & Vg2, 3)
Supply Current (Idd) (Vdd = +3.5V, Vgg = -0.15V Typ.)
Vdd = +3.5V*, Idd = 60mA, -55 to +85 deg C
Min.
Typ.
18 - 24
17
22
鹵1
2.5
13
10
40
5
8
17
3.25
45
9
12
22
3.5
-0.25
60
100
3.75
42
6
8.5
20
3.25
4
15
Max.
Min.
Typ.
24 - 32
20
鹵1
3.2
6
7
52
10
12
25
3.5
-0.25
60
100
3.75
4.7
Max.
Units
GHz
dB
dB
dB
dB
dB
dB
dB m
dB m
dB m
V dc
V dc
mA
* Vdd = Vd1, 2, 3 connected to +3.5V , adjust Vgg = Vg1, 2, 3 between-2.0 to +0.4V to achieve Idd =60 mA typical.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
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