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HMC261LM1 Datasheet

  • HMC261LM1

  • SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz

  • 8頁

  • HITTITE

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MICROWAVE CORPORATION
HMC261LM1
V
01.0900
SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
F
EBRUARY
2001
Features
SMT mmWAVE PACKAGE
General Description
The HMC261LM1 is a GaAs MMIC distributed
amplifier in a SMT leadless chip carrier package
covering 20 to 32 GHz. The LM1 is a true
surface mount broadband millimeterwave pack-
age offering low loss & excellent I/O match,
preserving MMIC chip performance. Utilizing a
GaAs PHEMT process the device offers 13 dB
gain and +14 dBm saturated output power from
a bias supply of +4V @ 75 mA. The packaged
amplifier enables economical PCB SMT assem-
bly for millimeterwave point-to-point radios,
LMDS, and SATCOM applications. As an alter-
native to chip-and-wire hybrid assemblies the
HMC261LM1 eliminates the need for
wirebonding, thereby providing a consistent
connection interface for the customer. All data is
with the non-hermetic, epoxy sealed LM1 pack-
aged LNA device mounted in a 50 ohm test
fixture. This part replaces the HMC261CB1 by
offering more bandwidth and gain.
1
A
MPLIFIERS
SMT
13 dB GAIN
P1dB OUTPUT POWER: +12 dBm
SINGLE POSITIVE SUPPLY : +3V to +4V
NO GATE BIAS
Guaranteed Performance,
Parameter
Frequency Range
Gain
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dBo)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Voltage (Vdd)
Supply Current (Idd) (Vdd = 4.0 Vdc)
Vdd = +4V, -55 to +85 deg C
Min.
Typ.
20 - 32
8
5
10
13
8
12
35
8
10
16
12
14
21
8.5
2.75
4.0
75
12.5
4.25
90
2.75
8
11
17
17
10
6
10
Max.
Min.
Typ.
27 - 30
13
8
12
40
12
14
21
7
4.0
75
8.5
4.25
90
16
Max.
Units
GHz
dB
dB
dB
dB
dB m
dB m
dB m
dB
V dc
mA
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1-8

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