MICROWAVE CORPORATION
v03.0404
HMC199MS8
DUAL SPDT SWITCH
DC - 2.5 GHz
Features
Integrated Dual SPDTs
Low Insertion Loss: <0.5 dB @ 2.0 GHz
Positive Control: 0/+5V
Ultra Small MSOP8 Package: 14.8 mm
2
Typical Applications
The HMC199MS8 is ideal for:
鈥?Cellular
鈥?ISM Basestations
鈥?PCS
Functional Diagram
General Description
The HMC199MS8 is a low-cost dual SPDT GaAs
鈥渂ypass鈥?switch in an 8-lead MSOP package cover-
ing DC to 2.5 GHz. This four RF port component
integrates two SPDT switches and a through line
onto a single IC. The design provides low insertion
loss of less than 0.5 dB while switching passive or
active external circuit components in and out of the
signal path. Port to port isolations are typically 25
to 30 dB. On-chip circuitry enables positive voltage
control operation at very low DC currents with con-
trol inputs compatible with CMOS and most TTL
logic families. Applications include LNA or 鏗乴ter
bypass switching and single bit attenuator switch-
ing.
14
SWITCHES - SMT
Electrical Speci鏗乧ations,
T
A
= +25擄 C, Vctl = 0/+5 Vdc, 50 Ohm System
Parameter
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 2.0 GHz
DC - 2.5 GHz
0.5 - 2.0 GHz
0.5 - 2.0 GHz
DC - 2.5 GHz
20
40
ns
ns
22
17
17
12
19
32
Min.
Typ.
0.3
0.5
0.7
25
21
20
15
23
36
Max.
0.6
0.8
1.0
Units
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
Insertion Loss
Isolation
Return Loss (On State, Any Port)
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-tone Input Power = 0 dBm Each Tone)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
14 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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