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HMBTA13 Datasheet

  • HMBTA13

  • NPN EPITAXIAL PLANAR TRANSISTOR

  • 35.09KB

  • 4頁

  • HSMC

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6842
Issued Date : 1994.07.29
Revised Date : 2002.12.27
Page No. : 1/4
HMBTA13
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Amplifier Transistor
Absolute Maximum Ratings
SOT-23
鈥?/div>
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
擄C
Junction Temperature.................................................................................... +150
擄C
Maximum
鈥?/div>
Maximum Power Dissipation
Total Power Dissipation (Ta=25擄C) ............................................................................... 225 mW
鈥?/div>
Thermal Resistance
Junction To Ambient R胃ja............................................................................................ 556
o
C/W
鈥?/div>
Maximum Voltages and Currents (Ta=25擄C)
VCBO Collector to Base Voltage ......................................................................................... 30 V
VCES Collector to Emitter Voltage ...................................................................................... 30 V
VEBO Emitter to Base Voltage............................................................................................ 10 V
IC Collector Current........................................................................................................ 300 mA
Characteristics
(Ta=25擄C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
30
30
10
-
-
-
-
5K
10K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.5
2.0
-
-
-
6
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA
IC=100uA
IE=10uA
VCB=30V
VEB=10V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
鈮?80us,
Duty Cycle鈮?%
MHz
pF
HMBTA13
HSMC Product Specification

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