鈥?/div>
2.5 V
鹵
5% operation and 1.5 V (V
DDQ
)
32-Mbit density
Synchronous register to register operation
Internal self-timed late write
Byte write control (4 byte write selects, one for each 9-bit)
Optional
脳18
configuration
HSTL compatible I/O
Programmable impedance output drivers
Differential HSTL clock inputs
Asynchronous
G
output control
Asynchronous sleep mode
FC-BGA 119pin package with SRAM JEDEC standard pinout
Limited set of boundary scan JTAG IEEE 1149.1 compatible
Ordering Information
Type No.
HM64YGB36100BP-33
Organization
1M
脳
36
Access time
1.6 ns
Cycle time
3.3 ns
Package
119-bump 1.27 mm
14 mm
脳
22 mm BGA
PRBG0119DC-A (BP-119F)
Note: HM: Hitachi Memory prefix, 64: External Cache SRAM, Y: V
DD
= 2.5 V, G: Late Write SRAM, B: V
DDQ
= 1.5 V
Rev.1.00 Jun 27, 2005 page 1 of 19