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SILICON PLANAR

HIGH SPEED SWITCHING DIODES

I

HD2A

HD3A

HD4A

1

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

UNIT

Continuous

Reverse Voltage

Forward Current

Power Dissipation at

T

amb

= 25擄C

Operating and Storage Temperature Range

V

R

I

F

P

T O T

75

100

V

mA

mW

o

tj:tstg

330

鈥?5 to

+ 1 5 0

c

ELECTRICAL CHARACTERISTICS (at T

j

= 25擄C unless otherwise stated)

PARAMETER

Breakdown Voltage

Forward Voltage

Reverse Current

Total Capacitance

Reverse Recovery Time

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS

V

BR

85

0.5

0.715

1.0

1.0

60

4

Typ.

V

V

I

R

= 100碌A(chǔ)

l

F

= 1 m A

l

F

= 1 0 m A

V

R

= 7 5 V

o

V

R

=75V, T

J

= 1 2 5 C

V

R

=O, f=lMHz

V

F

I

R

C

T

t

rr

v

碌A(chǔ)

碌A(chǔ)

pF

6

ns

I

F

=

l0mA, I

R

= 10mA

I

rr

= 1 mA

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