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HD1 Datasheet

  • HD1

  • NEC [on-chip resistor NPN silicon epitaxial transistor For ...

  • NEC   NEC

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DATA SHEET
COMPOUND TRANSISTOR
HD1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
鈥?High current drives such as IC outputs and actuators available
鈥?On-chip bias resistor
鈥?Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
HD1 SERIES LISTS
Products
HD1A3M
HD1F3P
HD1L3N
HD1A4M
HD1L2Q
HD1F2Q
HD1A4A
Marking
LP
LQ
LR
LS
LT
LU
LX
R
1
(K鈩?
1.0
2.2
4.7
10
0.47
0.22
鈭?/div>
R
2
(K鈩?
1.0
10
10
10
4.7
2.2
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
**
T
j
T
stg
Ratings
80
60
10
1.0
2.0
0.02
2.0
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
擄C
擄C
* PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50 %
** When 0.7 mm
16 cm ceramic board is used
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16182EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
1998

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