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HD122 Datasheet

  • HD122

  • NPN EPITAXIAL SILION DARLINGTON TRANSISTOR

  • 4頁

  • HSMC

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 1/4
HD122
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Description
The HD122 is designed for medium power linear and switching
applications.
Absolute Maximum Ratings
(Ta=25擄C)
鈥?/div>
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
擄C
Junction Temperature ................................................................................... +150
擄C
Maximum
鈥?/div>
Maximum Power Dissipation
Total Power Dissipation (Tc=25擄C) .................................................................................... 40 W
鈥?/div>
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 4 A
IC Collector Current (Pulse) .............................................................................................. 0.1 A
Electrical Characteristics
(Ta=25擄C)
Symbol
BVCBO
*BVCEO
BVEBO
ICEO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
Min.
100
100
5
-
-
-
-
-
-
1000
1000
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
2
1
2
2.5
2.8
2.5
-
-
Unit
V
V
V
mA
mA
mA
V
V
V
Test Conditions
IC=1mA
IC=100mA
IE=100uA
VCE=50V
VCB=100V
VBE=5V
IC=1.5A, IB=30mA
IC=2A, IB=40mA
IC=3A, VCE=3V
IC=0.5A, VCE=3V
IC=3A, VCE=3V
*Pulse Test : Pulse Width
鈮?80us,
Duty Cycle鈮?%
HSMC Product Specification

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