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HCPL3180 Datasheet

  • HCPL3180

  • Current, High Speed IGBT/MOSFET Gate Drive Optocoupler

  • 19頁(yè)

  • AGILENT   AGILENT

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Agilent HCPL-3180 2 Amp Output
Current, High Speed IGBT/MOSFET Gate
Drive Optocoupler
Data Sheet
Features
鈥?/div>
2 A minimum peak output current
鈥?/div>
250 KHz maximum switching
speed
鈥?/div>
High speed response: 200 ns max
Propagation delay over
temperature range
鈥?/div>
10 KV/us minimum common mode
rejection (CMR) at V
CM
=1500 V
鈥?/div>
Under voltage lockout protection
(UVLO) with hysteresis
鈥?/div>
Wide operating temperature
range: -40 擄C to +100
擄
C
鈥?/div>
Wide V
CC
operating range:
10 V to 20 V
鈥?/div>
20 ns typ pulse width distortion
鈥?/div>
Safety Approvals:
UL approval pending
3750 V
RMS
for 1 minute.
CSA approval
DIN EN 60747-5-2 approval
pending
Applications
鈥?/div>
Plasma Display Panel (PDP)
鈥?/div>
Distributed power architecture
(DPA)
鈥?/div>
Switch mode rectifier (SMR)
鈥?/div>
High performance DC/DC
convertor
鈥?/div>
High performance switch mode
power supply (SMPS)
鈥?/div>
High performance uninterruptible
power supply (UPS)
鈥?/div>
Isolated IGBT/Power MOSFET
gate drive
Description
This family of devices consists of
a GaAsP LED. The LED is
optically coupled to an
integrated circuit with a power
stage. These optocouplers are
ideally suited for high frequency
driving of power IGBT and
MOSFETs used in Plasma
Display Panels, high
performance DC/DC convertors
and motor control invertor
applications.
Ordering Information
Specify part number followed by
option number (if desired):
Example : HCPL-3180-XXX
N/C
ANODE
CATHODE
N/C
1
2
3
4
8
7
6
V
CC
V
O
V
O
5 V
EE
Functional Diagram
No option = Standard DIP
package, 50 per tube.
300 = Gull Wing Surface Mount
Option, 50 per tube.
500 = Tape and Reel Packaging
Option.
060 = DIN EN 60747-5-2 Option,
VIORM=630 Vpeak (pending
approval)
A 0.1 uF bypass capacitor must be connected between pins 5 and 8.
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/
or degradation which may be induced by ESD.

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