H
Intelligent Power Module and
Gate Drive Interface Optocouplers
Technical Data
Features
鈥?Performance Specified for
Common IPM Applications
over Industrial Temperature
Range: -40
擄
C to 100
擄
C
鈥?Fast Maximum Propagation
Delays
t
PHL
= 400 ns
t
PLH
= 550 ns
鈥?Minimized Pulse Width
Distortion (PWD = 450 ns)
鈥?15 kV/
碌
s Minimum Common
Mode Transient Immunity at
V
CM
= 1500 V
鈥?CTR > 44% at I
F
= 10 mA
鈥?Safety Approval
UL Recognized - 2500 V rms
for 1 minute (5000 V rms for
1 minute for HCNW4506 and
HCPL-4506 Option 020) per
UL1577
CSA Approved
VDE 0884 Approved
-V
IORM
= 630 V
peak
for
HCPL-4506 Option 060
-V
IORM
= 1414 V
peak
for
HCNW4506
BSI Certified (HCNW4506)
HCPL-4506
HCPL-0466
HCNW4506
Applications
鈥?IPM Isolation
鈥?Isolated IGBT/MOSFET Gate
Drive
鈥?AC and Brushless DC Motor
Drives
鈥?Industrial Inverters
gation delay difference between
devices make these optocouplers
excellent solutions for improving
inverter efficiency through
reduced switching dead time.
An on chip 20 k鈩?output pull-up
resistor can be enabled by short-
ing output pins 6 and 7, thus
eliminating the need for an
external pull-up resistor in
common IPM applications. Speci-
fications and performance plots
are given for typical IPM
applications.
Description
The HCPL-4506 and HCPL-0466
contain a GaAsP LED while the
HCNW4506 contains an AlGaAs
LED. The LED is optically
coupled to an integrated high gain
photo detector. Minimized propa-
Functional Diagram
NC
1
20 k鈩?/div>
ANODE
2
7
V
L
8
V
CC
Truth Table
LED
ON
OFF
V
O
L
H
CATHODE
3
6
V
O
NC
4
SHIELD
5
GND
Selection Guide
Operating Temperature
T
A
[
擄
C]
Min.
-40
-55
Max.
100
125
8-Pin DIP
(300 Mil)
HCPL-4506
Single Channel Packages
Small Outline
SO-8
HCPL-0466
Widebody
(400 Mil)
HCNW4506
Hermetic*
HCPL-5300
HCPL-5301
*Technical data for these products are on separate HP publications.
The connection of a 0.1
碌F
bypass capacitor between pins 5 and 8 is recommended.
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
5965-3603E
1-49
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