HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HM200105
Issued Date : 2001.10.01
Revised Date : 2001.11.20
Page No. : 1/4
HBT169M
THYRISTORS
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended
for use in general purpose switching and phase control applications. These
devices are intended to be interfaced directly to microcontrollers, logic
integrated circuits and other low power gate trigger circuits.
SOT-89
Quick Reference Data
Symbol
V
DRM
, V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
Max.
400
0.5
0.8
8
Unit
V
A
A
A
Pin Configuration
Pin
1
2
3
Gate
Anode
Cathode
1
2
3
Description
Symbol
A
K
G
Limtiing Values
Symbol
V
DRM
, V
RRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
Tstg
Tj
Parameter
Repetitive peak off-state voltages
Average on-state current (half sine wave; T
lead
鈮?3擄C)
RMS on-state current (all conduction angles)
Non-repetitive peak on-state current (t=10ms)
Non-repetitive peak on-state current (t=8.3ms)
I
2
t for fusing (t=10ms)
Repetitive rate of rise of on-state current after triggering
(I
TM
=2A; I
G
=10mA; dI
G
/dt=100mA/us)
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power (over any 20ms period)
Storage temperature
Operating junction temperature
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
400
0.5
0.8
8
9
0.32
50
1
5
5
2
0.1
150
125
Units
V
A
A
A
A
A
2
S
A/us
A
V
V
W
W
擄C
擄C
HBT169M
HSMC Product Specification
1
2
3
4
