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HBT136AE Datasheet

  • HBT136AE

  • TRIAC

  • 4頁

  • HSMC

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200101
Issued Date : 2001.07.01
Revised Date : 2002.03.27
Page No. : 1/4
HBT136AE
TRIAC
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for
use in general purpose bidirectional switching and phase control
applications, where high sensitivity is required in all four quadrants.
TO-220AB
Quick Reference Data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
Max.
600
4
25
Unit
V
A
A
Pin Configuration
Pin
1
2
3
tab
Description
Main terminal 1
Main terminal 2
Gate
Main terminal 2
tab
1 2 3
G
Symbol
T2
T1
Limtiing Values
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
Parameter
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
I
2
t for fusing
Repetitive rate of rise of on-state current after triggering
T2+ G+
T2+ G-
T2- G-
T2- G+
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage Temperature Range
Operating junction temperature
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
600
4
25
3.1
50
50
50
10
2
5
5
0.5
150
125
Units
V
A
A
A
2
S
A/us
A/us
A/us
A/us
A
V
W
W
擄C
擄C
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
HBT136AE
HSMC Product Specification

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