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HBFP0420 Datasheet

  • HBFP0420

  • High Performance Isolated Collector Silicon Bipolar Transist...

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High Performance Isolated
Collector Silicon Bipolar
Transistor
Technical Data
HBFP-0420
Features
鈥?Ideal for High Gain, Low
Noise Applications
鈥?Transition Frequency
f
T
= 25 GHz
鈥?Typical Performance at
1.8 GHz
Associated Gain of 17 dB
and Noise Figure of 1.1 dB
at 2 V and 5 mA
P
1dB
of 12 dBm at 2 V and
20 mA
鈥?Can be Used Without
Impedance Matching
Surface Mount Plastic
Description
Package/ SOT-343 (SC-70)
Hewlett Packard鈥檚 HBFP-0420 is a
Outline 4T
high performance isolated
collector silicon bipolar junction
transistor housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
HBFP-0420 provides an associated
gain of 17 dB, noise figure of
1.1 dB, and P
1dB
of 12 dBm at
1.8 GHz. Because of high gain and
low current characteristics,
HBFP-0420 is ideal for
cellular/
PCS handsets
as well as for
C-Band and Ku-Band
applications.
This product is based on a 25 GHz
transition frequency fabrication
process, which enables the
products to be used for high
performance, low noise applica-
tions at 900 MHz, 1.9 GHz,
2.4 GHz, and beyond.
Pin Configuration
Applications
鈥?LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
鈥?Oscillator for
TV Delivery
and TVRO Systems up to
10 GHz
Emitter
Collector
Note:
Package marking provides orientation
and identification.
03
Base
Emitter

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