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HBFP0405 Datasheet

  • HBFP0405

  • High Performance Isolated Collector Silicon Bipolar Transist...

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High Performance Isolated
Collector Silicon Bipolar
Transistor
Technical Data
HBFP-0405
Features
鈥?Ideal for High Gain, Low
Current Applications
鈥?Typical Performance at
1.8 GHz
Associated Gain of 18 dB
and Noise Figure of 1.2 dB
at 2 V and 2 mA
P
1dB
of 5 dBm at 2 V and
5 mA
鈥?Miniature 4-lead SC-70
(SOT-343) Plastic Package
鈥?Transition Frequency
f
T
= 25 GHz
Surface Mount Plastic
Description
Package/ SOT-343 (SC-70)
Hewlett Packard鈥檚 HBFP-0405 is a
Outline 4T
high performance isolated
collector silicon bipolar junction
transistor housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
HBFP-0405 provides an associated
gain of 18 dB, noise figure of
1.2 dB, and P
1dB
of 5 dBm at
1.8 GHz. Because of high gain and
low current characteristics,
HBFP-0405 is ideal for
cellular/
PCS
as well as for
C-Band and
Ku-Band
applications.
This product is based on a 25 GHz
transition frequency fabrication
process, which enables the
products to be used for high
performance, low noise applica-
tions at 900 MHz, 1.9 GHz,
2.4 GHz, and beyond.
Pin Configuration
Applications
鈥?LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
鈥?Oscillator for
TV Delivery
and TVRO Systems up to
12 GHz
Emitter
Collector
Note:
Package marking provides orientation
and identification.
02
Base
Emitter

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