HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200201
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 1/3
HBD437T
COMPLEMENTARY SILICON POWER TRANSISTORS
Description
The HBD437T is silison epitaxial-base NPN power transistor in TO-126
plastic package, intented for use in medium power linear and switching
applications. The complementary PNP type is HBD438T.
Absolute Maximum Ratings
(Ta=25擄C)
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICM
IB
PD
Tstg
Tj
Parametor
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (VBE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current
Collector Peak Current (t鈮?0ms)
Base Current
Tc=25擄C
Total Dissipation at
Ta=25擄C
Storage Temperature
Max. Operating Junction Temperature
Value
45
45
45
5
4
7
1
25
1.5
-55 to 150
150
TO-126
Unit
V
V
V
V
A
A
A
W
W
擄C
擄C
Thermal Data
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
5
83
擄C/W
擄C/W
Electrical Characteristics
(Ta=25擄C, unless otherwise specified)
Symbol
ICBO
ICES
IEBO
*VCEO(sus)
*VCE(sat)
*VBE
*hFE
fT
Parameter
Collector Cut-off Current (IE=0)
Collector Cut-off Current
(VBE=0)
Emitter Cut-off Current (IC=0)
Collector-Emitter Sustaining
Voltage (IB=0)
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
Test Conditions
VCB=45V
VCE=45V
VEB=5V
IC=100mA
IC=2A, IB=0.2A
IC=10mA,VCE=5V
IC=2A, VCE=1V
IC=10mA, VCE=5V
IC=0.5A, VCE=1V
IC=2A, VCE=1V
IC=0.25A, VCE=1V
45
-
-
-
30
85
40
3
-
0.4
0.58
-
130
140
-
-
Min.
-
-
Typ.
-
-
Max.
100
100
1
-
0.6
-
1.2
-
-
-
-
Unit
uA
uA
mA
V
V
V
V
MHz
*Pulse Test: Pulse Width
鈮?80us,
Duty Cycle鈮?%
HBD437T
HSMC Product Specification
1
2
3
