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HAF1002(L), HAF1002(S)

Silicon P Channel MOS FET Series

Power Switching

ADE-208-586 (Z)

1st. Edition

October 1997

Features

This FET has the over temperature shut鈥揹own capability sensing to the junction temperature.

This FET has the built鈥搃n over temperature shut鈥揹own circuit in the gate area. And this circuit

operation to shut鈥揹own the gate voltage in case of high junction temperature like applying over power

consumption, over current etc.

鈥?/div>

Logic level operation (鈥? to 鈥? V Gate drive)

鈥?/div>

High endurance capability against to the short circuit

鈥?/div>

Built鈥搃n the over temperature shut鈥揹own circuit

鈥?/div>

Latch type shut鈥揹own operation (Need 0 voltage recovery)

Outline

LDPAK

D

4

G

Gate resistor

Tempe鈥?/div>

rature

Sencing

Circuit

1

2

3

Latch

Circuit

Gate

Shut鈥?/div>

down

Circuit

2

3

S

1. Gate

2. Drain

3. Source

4. Drain

型號

版本

描述

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HAF1002S Datasheet

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