HAF1001
Silicon P Channel MOS FET Series
Power Switching / Over Temperature Shut鈥揹own Capability
ADE-208-583 A (Z)
2nd Edition
October 1997
Features
This FET has the over temperature shut鈥揹own capability sensing to the junction temperature.
This FET has the built鈥搃n over temperature shut鈥揹own circuit in the gate area. And this circuit
operation to shut鈥揹own the gate voltage in case of high junction temperature like applying over power
consumption, over current etc.
鈥?/div>
Logic level operation (鈥? to 鈥? V Gate drive)
鈥?/div>
High endurance capability against to the short circuit
鈥?/div>
Built鈥搃n the over temperature shut鈥揹own circuit
鈥?/div>
Latch type shut鈥揹own operation (Need 0 voltage recovery)
Outline
TO鈥?20AB
D
4
G
Gate resistor
Tempe鈥?/div>
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut鈥?/div>
down
Circuit
1
2
S
3
1. Gate
2. Drain
3. Source
4. Drain
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Silicon P Channel MOS FET Series Power Switching / Over Temp...
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Silicon P Channel MOS FET Series Power Switching / Over Temp...
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Silicon P Channel MOS FET Series Power Switching
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Silicon P Channel MOS FET Series Power Switching
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英文版
Silicon P Channel MOS FET Series Power Switching
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英文版
Silicon P Channel MOS FET Series Power Switching
HITACHI [H...
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英文版
Silicon P Channel MOS FET Series Power Switching
HITACHI
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英文版
Silicon P Channel MOS FET Series Power Switching
HITACHI [H...
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英文版
Silicon P Channel MOS FET Series Power Switching
RENESAS [R...
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英文版
Silicon P Channel MOS FET Series Power Switching
RENESAS [R...
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英文版
Silicon P Channel MOS FET Series Power Switching
RENESAS [R...
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英文版
Silicon P Channel MOS FET Series Power Switching
RENESAS [R...
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英文版
Silicon P Channel MOS FET Series Power Switching
RENESAS [R...
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英文版
Silicon P Channel MOS FET Series Power Switching
RENESAS [R...
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英文版
Silicon P Channel MOS FET Series Power Switching
RENESAS [R...