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H8NB90FI Datasheet

  • H8NB90FI

  • N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh⑩...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 900V - 1.1
鈩?/div>
- 8 A TO-247/ISOWATT218
PowerMesh鈩?MOSFET
TYPE
STW8NB90
STH8NB90FI
s
s
s
s
s
STW8NB90
STH8NB90FI
V
DSS
900 V
900 V
R
DS(on)
< 1.45
鈩?/div>
< 1.45
鈩?/div>
I
D
8A
5A
TYPICAL R
DS
(on) = 1.1
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
TO-247
3
2
1
3
2
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company鈥檚 proprieraty edge termi-
nation structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
dv/dt (1)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Value
STW8NB90
900
900
鹵30
8
5
32
200
1.6
4
-
鈥?5 to 150
150
2500
5
3
20
80
0.64
STH8NB90FI
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
V
擄C
擄C
(鈥?Pulse width limited by safe operating area
(1)I
SD
鈮?
A, di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
July 2001
1/9

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  • 英文版
    N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh⑩...
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh⑩...
    STMICROELECTRON...

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