音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

H603AL Datasheet

  • H603AL

  • N-Channel Logic Level Enhancement Mode Field Effect Transist...

  • 63.36KB

  • 5頁

  • HSMC

掃碼查看芯片數據手冊

上傳產品規(guī)格書

PDF預覽

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/5
H603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description
This very high density process has been especially tailored to minimize on-
state resistance and provide superior switching performance. These
devices are particularly suited for low voltage applications such as DC/DC
converters and other battery powered circuits where fast switching, low in-
line power loss, and resistance to transients are needed.
Absolute Maximum Ratings
(Ta=25擄C)
鈥?/div>
Maximum Temperatures
Operating and Storage Temperature ................................................................................ -65 ~ +175
擄C
鈥?/div>
Maximum Power Dissipation
Total Power Dissipation at Tc=25擄C ............................................................................................... 60 W
Derate Above 25擄C ................................................................................................................ 0.4 W /
擄C
鈥?/div>
Maximum Voltages and Currents
Drain-Source Voltage ...................................................................................................................... 30 V
Gate-Source Voltage -Continuous................................................................................................
20 V
Drain Current -Continuous .............................................................................................................. 30 A
Drain Current -Pulsed ................................................................................................................... 100 A
Thermal Resistance, Junction-to-Case .................................................................................. 2.5
擄C
/ W
Thermal Resistance, Junction-to-Ambient............................................................................ 62.5
擄C
/ W
Electrical Characteristics
鈥?/div>
Off Characteristics
Symbol
Parameter
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
+I
GSS
Gate-Body Leakage, Forward
-I
GSS
Gate-Body Leakage, Reverse
鈥?/div>
On Characteristics
V
GS(TH)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
V
DS
=V
GS
, I
D
=10mA
V
GS
=10V, I
D
=25A
V
GS
=4.5V, I
D
=10A
V
GS
=10V, V
DS
=10V
V
GS
=4.5V, V
DS
=10V
V
DS
=10V, I
D
=25A
1.1
1.4
-
-
60
15
-
-
-
-
-
3
-
3
0.018 0.022
0.029 0.040
-
-
-
-
26
-
1100
600
180
-
-
-
V
鈩?/div>
A
S
pF
pF
pF
Condition
V
GS
=0V, I
D
=250uA
V
DS
=30V, V
GS
=0V
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
Min
30
-
-
-
Typ
-
-
-
-
Max Unit
-
V
10
uA
100 nA
-100 nA
R
DS
(on) Static Drain-Source On-Resistance
I
DS
(on)
g
FS
On-State Drain Current
Forward Transconductance
鈥?/div>
Dynamic Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
=15V, V
GS
=0V
f=1.0Mhz
HSMC Product Specification

H603AL相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    HSMC
  • 英文版
    N-Channel Logic Level Enhancement Mode Field Effect Transist...
    HSMC [Hi-S...

您可能感興趣的PDF文件資料

掃碼下載APP,
一鍵連接廣大的電子世界。

在線人工客服

買家服務:
賣家服務:
技術客服:

0571-85317607

網站技術支持

13606545031

客服在線時間周一至周五
9:00-17:30

關注官方微信號,
第一時間獲取資訊。

建議反饋

聯(lián)系人:

聯(lián)系方式:

按住滑塊,拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見,您的參與是維庫提升服務的動力!意見一經采納,將有感恩紅包奉上哦!