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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200606

Issued Date : 2006.03.01

Revised Date : 2006.05.04

Page No. : 1/4

H3055LJ

N-Channel Enhancement-Mode MOSFET (20V, 13A)

H3055LJ Pin Assignment

Tab

1

2

3

3-Lead Plastic

TO-252

Package Code: J

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced

trench process. It has been optimized for power management applications with a

wide range of gate drive voltage (2.5V-10V)

D

Internal Schematic

Diagram

G

S

Features

鈥?/div>

R

DS(on)

=45m鈩V

GS

=2.5V, I

D

=5.2A; R

DS(on)

=35m鈩V

GS

=4.5V, I

D

=6A

鈥?/div>

High Density Cell Design for Ultra Low On-Resistance

鈥?/div>

High Power and Current Handing Capability

鈥?/div>

Fully Characterized Avalanche Voltage and Current

鈥?/div>

Ideal for Li ion Battery Pack Applications

Applications

鈥?/div>

Battery Protection

鈥?/div>

Load Switch

鈥?/div>

Power Management

Absolute Maximum Ratings

(T =25 C, unless otherwise noted)

o

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

T

j

, T

stg

R

胃JA

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Continuous)

Drain Current (Pulsed)

*1

Parameter

Ratings

20

鹵12

13

30

2

1.3

-55 to +150

62.5

Units

V

A

W

擄C

擄C/W

Total Power Dissipation @T

A

=25

o

C

Total Power Dissipation @T

A

=75

o

C

Operating and Storage Temperature Range

Thermal Resistance Junction to Ambient

*2

*1: Maximum DC current limited by the package

*2: 1-in

2

2oz Cu PCB board

H3055LJ

HSMC Product Specification

型號

版本

描述

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H3055LJ

英文版

N-Channel Enhancement-Mode MOSFET (20V, 13A)

HSMC

H3055LJ
H3055LJ

英文版

N-Channel Enhancement-Mode MOSFET (20V, 13A)

HSMC [Hi-S...

H3055LJ

H3055LJ Datasheet

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