HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 1/4
H2N7000
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Description
The H2N7000 is designed for high voltage, high speed applications
such as switching regulators, converters, solenoid and relay drivers.
Absolute Maximum Ratings
鈥?/div>
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
擄C
Junction Temperature ................................................................................... +150
擄C
Maximum
鈥?/div>
Maximum Power Dissipation
Total Power Dissipation (Ta=25擄C) ............................................................................... 400 mW
鈥?/div>
Maximum Voltages and Currents (Ta=25擄C)
BVDSS Drain to Source Voltage......................................................................................... 60 V
BVGSS Gate to Source Voltage ......................................................................................... 40 V
ID Drain Current............................................................................................................. 200 mA
Characteristics
(Ta=25擄C)
Symbol
VDSS
IDSS
鹵IGSS
VGS(th)
ID(on)
RDS(on)
VDSS(on)1
VDSS(on)2
Min.
60
-
-
0.8
75
-
-
-
Max.
-
1
鹵10
3
-
5
2.5
0.4
Unit
V
uA
nA
V
mA
鈩?/div>
V
v
Test Conditions
ID=10uA, VGS=0
VDS=48V
VGS=鹵15V
VDS=3V, ID=1mA
VGS=4.5V, VDS=10V
VGS=10V, ID=0.5A
VGS=10V, ID=0.5A
VGS=4.5V, ID=75mA
H2N7000
HSMC Product Specification
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