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H11G3 Datasheet

  • H11G3

  • 6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors)

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by H11G1/D
H11G1 *
GlobalOptoisolator鈩?/div>
[CTR = 1000% Min]
6-Pin DIP Optoisolators
Darlington Output (On-Chip Resistors)
The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs
optically coupled to silicon photodarlington detectors which have integral
base鈥揺mitter resistors. The on鈥揷hip resistors improve higher temperature
leakage characteristics. Designed with high isolation, high CTR, high voltage
and low leakage, they provide excellent performance.
鈥?/div>
High CTR, H11G1 & H11G2 鈥?1000% (@
IF = 10 mA), 500% (@ IF = 1 mA)
鈥?/div>
High V(BR)CEO, H11G1 鈥?100 Volts, H11G2 鈥?80 Volts
鈥?/div>
To order devices that are tested and marked per VDE 0884 requirements, the
suffix 鈥漋鈥?must be included at end of part number. VDE 0884 is a test option.
Applications
鈥?/div>
Interfacing and coupling systems of different potentials and impedances
鈥?/div>
Phase and Feedback Controls
鈥?/div>
General Purpose Switching Circuits
鈥?/div>
Solid State Relays
MAXIMUM RATINGS
(TA = 25擄C unless otherwise noted)
Rating
INPUT LED
Reverse Voltage
Forward Current 鈥?Continuous
Forward Current 鈥?Peak
Pulse Width = 300
碌s,
2% Duty Cycle
LED Power Dissipation @ TA = 25擄C
Derate above 25擄C
OUTPUT DETECTOR
Collector鈥揈mitter Voltage
H11G1
H11G2
H11G3
VCEO
100
80
55
7
150
150
1.76
Volts
VR
IF
IF
PD
6
60
3
120
1.41
Volts
mA
Amps
mW
mW/擄C
3
2
Symbol
Value
Unit
1
H11G2*
[CTR = 1000% Min]
H11G3
[CTR = 200% Min]
*Motorola Preferred Devices
STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE
CASE 730A鈥?4
SCHEMATIC
6
5
4
PIN 1.
2.
3.
4.
5.
6.
ANODE
CATHODE
N.C.
EMITTER
COLLECTOR
BASE
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Detector Power Dissipation @ TA = 25擄C
Derate above 25擄C
TOTAL DEVICE
Total Device Power Dissipation @ TA = 25擄C
Derate above 25擄C
Operating Junction Temperature Range(2)
Storage Temperature Range(2)
Soldering Temperature (10 s)
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VEBO
IC
PD
Volts
mA
mW
mW/擄C
PD
TA
Tstg
TL
VISO
250
2.94
鈥?55 to +100
鈥?55 to +150
260
7500
mW
mW/擄C
擄C
擄C
擄C
Vac(pk)
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred
devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 1
漏
Motorola
Inc. 1995
Motorola,
Optoelectronics Device Data
1

H11G3 產(chǎn)品屬性

  • 1,000

  • 隔離器

  • 光隔離器 - 晶體管，光電輸出

  • -

  • 1

  • DC

  • 5300Vrms

  • 200% @ 1mA

  • -

  • 55V

  • -

  • 60mA

  • 1.2V

  • 有基極的達(dá)林頓晶體管

  • 通孔

  • 6-DIP（0.300"，7.62mm）

  • 管件

  • H11G3QTH11G3QT-ND

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