HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a
gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
which has an integral base-emitter resistor to optimize elevated temperature characteristics.
H11G1
H11G2
H11G3
FEATURES
鈥?High BV
CEO
- Minimum 100 V for H11G1
- Minimum 80 V for H11G2
- Minimum 55 V for H11G3
鈥?High sensitivity to low input current
Minimum 500 percent CTR at I
F
= 1 mA
鈥?Low leakage current at elevated temperature
(maximum 100 碌A(chǔ) at 80擄C)
鈥?Underwriters Laboratory (UL) recognized File# E90700
APPLICATIONS
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
CMOS logic interface
Telephone ring detector
Low input TTL interface
Power supply isolation
Replace pulse transformer
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
NOTE
All dimensions are in inches (millimeters)
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
Input-Output Isolation Voltage
EMITTER
Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1碌s pulse, 300pps)
LED Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
DETECTOR
Collector-Emitter Voltage
H11G1
H11G2
H11G3
Detector Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
Symbol
T
STG
T
OPR
T
SOL
P
D
V
ISO
I
F
V
R
I
F
(pk)
P
D
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
5300
60
6.0
3.0
100
1.8
Units
擄C
擄C
擄C
mW
mW/擄C
Vac(rms)
mA
V
A
mW
mW/擄C
V
CEO
P
D
100
80
55
200
2.67
V
mW
mW/擄C
7/21/00
200045A
H11G2W 產(chǎn)品屬性
1,000
隔離器
光隔離器 - 晶體管，光電輸出
-
1
DC
5300Vrms
500% @ 1mA
-
80V
-
60mA
1V
有基極的達林頓晶體管
通孔
6-DIP（0.400"，10.16mm）
管件
H11G2W相關(guān)型號PDF文件下載
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型號
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