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4-PIN PHOTODARLINGTON

OPTOCOUPLERS

H11B815

DESCRIPTION

The H11B815 consists of a gallium arsenide infrared

emitting diode driving a silicon Darlington phototransistor

in a 4-pin dual in-line package.

4

FEATURES

鈥?Compact 4-pin package

鈥?Current Transfer Ratio: 600% minimum (at I

F

= 1 mA)

鈥?High isolation voltage between input and output (5300

VRMS)

鈥?UL recognized (File # E90700)

4

1

4

1

APPLICATIONS

鈥?Power Supply Monitors

鈥?Relay Contact Monitor

鈥?Telephone/Telegraph Line

Receiver

鈥?Twisted Pair Line Receiver

鈥?Digital Logic/Digital Logic

ANODE 1

4 COLLECTOR

1

CATHODE 2

3 EMITTER

ABSOLUTE MAXIMUM RATINGS

Parameter

TOTAL DEVICE

Storage Temperature

Operating Temperature

Lead Solder Temperature

Total Device Power Dissipation @ T

A

= 25擄C

EMITTER

DC/Average Forward Input Current

Reverse Input Voltage

Forward Current - Peak (1碌s pulse, 300pps)

LED Power Dissipation @ T

A

= 25擄C

Derate above 25擄C

DETECTOR

Collector-Emitter Voltage

Emitter-Collector Voltage

Continuous Collector Current

Detector Power Dissipation @ T

A

= 25擄C

Derate above 25擄C

(No derating required up to 85擄C)

Symbol

T

STG

T

OPR

T

SOL

P

D

I

F

V

R

I

F

(pk)

P

D

V

CEO

V

ECO

I

C

P

D

Value

-55 to +150

-55 to +100

260 for 10 sec

250

80

6

1

140

1.33

35

6

200

200

2.0

Units

擄C

擄C

擄C

mW

mA

V

A

mW

mW/擄C

V

V

mA

mW

mW/擄C

1/25/00

200029A

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H11B815相關(guān)型號(hào)PDF文件下載

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  描述
  廠商
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• H11B3
  英文版
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