Ordering number:EN1349C
GZB2.0 to 36
Silicon Planar Type
1.0W Zener Diode
Features
路 Glass sleeve structure.
路 Voltage regulator, surge absorber applications.
路 Power dissipation : P=1.0mW.
路 Zener voltage : V
Z
=2.0 to 36 V.
路 Small-sized package : JEDEC DO-41
Package Dimensions
unit:mm
1134
[GZB2.0 to 36]
C:Cathode
A:Anode
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
Tj
Tstg
Conditions
Ratings
1
175
鈥?5 to +175
Unit
W
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Type No.
Zener Voltage, Vz [V]
( t = 30 ms )
B
min
GZB2.0
GZB2.2
GZB2.4
GZB2.7
GZB3.0
GZB3.3
GZB3.6
GZB3.9
GZB4.3
GZB4.7
GZB5.1
GZB5.6
GZB6.2
GZB6.8
1.88
2.08
2.28
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.3
5.8
6.4
min
2.12
2.33
2.56
2.9
3.2
3.5
3.8
4.1
4.5
4.9
5.4
6.0
6.6
7.2
min
2.00
2.20
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
C
min
2.24
2.45
2.7
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.7
6.3
7.0
7.7
Zener Characteristics
Dynamic Resistance
rd [鈩
f=1kHz
min
15
12
12
9
9
9
9
9
9
7
5
5
3
3
min
25
20
20
15
15
15
15
15
15
10
8
8
6
6
Messured
Current
[mA]
40
40
40
40
40
40
40
40
40
40
40
40
40
40
Reverse Current
IR
[碌A(chǔ)]
200
200
200
200
100
80
60
40
20
20
20
20
20
20
Messured
Voltage
VR
[V ]
0.5
0.7
1
1
1
1
1
1
1
1
1
1.5
3
3.5
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62098HA (KT)/2089TA/1179TA/9194MY, TS No.1349-1/3
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