GT8G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G131
Strobe Flash Applications
Unit: mm
路
路
路
路
路
Supplied in Compact and Thin Package Requires Only a Small
Mounting Area
4th generation (trench gate structure) IGBT
Enhancement-mode
4-V gate drive voltage: V
GE
= 4.0 V (min) (@I
C
= 150 A)
Peak collector current: I
C
= 150 A (max)
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Pulse
DC
1 ms
Symbol
V
CES
V
GES
V
GES
I
C
I
CP
P
C
T
j
T
stg
Rating
400
鹵6
鹵8
8
150
1.1
150
-55~150
2
Unit
V
V
Collector current
A
W
擄C
擄C
Collector power dissipation (Note 1)
Junction temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
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2-6J1C
Note 1: Drive operation: Mount on glass epoxy board [1 inch
麓
1.5 t]
Weight: 0.080 g (typ.)
Equivalent Circuit
8
7
6
5
1
2
3
4
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/ms.
1
2003-03-18
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