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GT80J101A Datasheet

  • GT80J101A

  • TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 80A I(C) | TO-2...

  • 4頁(yè)

  • ETC

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GT80J101A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type
GT80J101A
High Power Switching Applications
鈥?/div>
鈥?/div>
鈥?/div>
Enhancement-Mode
High Speed: t
f
=
0.40
碌s
(max) (I
C
=
80 A)
Low Saturation Voltage: V
CE (sat)
=
3.0 V (max) (I
C
=
80 A)
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
Collector power dissipation (Tc
=
25擄C)
Junction temperature
Storage temperature
Screw torque
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
錚?/div>
Rating
600
鹵20
80
160
200
150
鈭?5~150
0.8
W
擄C
擄C
N路m
Unit
V
V
A
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Thermal resistance
t
f
t
off
R
th (j-c)
Symbol
I
GES
I
CES
V
GE (OFF)
V
CE (sat)
(1)
V
CE (sat)
(2)
C
ies
t
r
t
on
15 V
0
鈭?5
V
3.75
鈩?/div>
33
鈩?/div>
V
IN
V
OUT
Test Condition
V
GE
= 鹵25
V, V
CE
=
0
V
CE
=
600 V, V
GE
=
0
V
CE
=
5 V, I
C
=
80 mA
I
C
=
10 A, V
GE
=
15 V
I
C
=
80 A, V
GE
=
15 V
V
CE
=
10 V, V
GE
=
0, f
=
1 MHz
Min
錚?/div>
錚?/div>
3.0
錚?/div>
錚?/div>
錚?/div>
Typ.
錚?/div>
錚?/div>
錚?/div>
錚?/div>
2.4
5500
0.3
0.5
0.25
0.7
錚?/div>
Max
鹵500
1.0
6.0
2.0
3.0
錚?/div>
0.6
0.8
碌s
0.40
1.0
0.625
擄C/W
961001EAA1
Unit
nA
mA
V
V
pF
錚?/div>
錚?/div>
錚?/div>
錚?/div>
錚?/div>
V
CC
=
300 V
錚?/div>
鈥?/div>
TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
鈥?/div>
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
鈥?/div>
The information contained herein is subject to change without notice.
2000-06-28
1/4

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