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GT60M322 Datasheet

  • GT60M322

  • TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel ...

  • 191.31KB

  • 6頁

  • TOSHIBA

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GT60M322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M322
Voltage Resonance Inverter Switching Application
Current Resonance Inverter Switching Application
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Enhancement mode type
High speed
: t
f
= 0.15 碌s (typ.) (I
C
= 60 A)
Low saturation voltage : V
CE (sat)
= 2.3 V (typ.) (I
C
= 60 A)
FRD included between emitter and collector
TO-3P(LH) (Toshiba package name)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
DC
Pulsed
@ Tc
=
100擄C
@ Tc
=
25擄C
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FP
P
C
T
j
T
stg
Rating
950
鹵25
60
120
25
50
76
190
150
鈭?5
to 150
Unit
V
V
A
JEDEC
A
鈥?/div>
鈥?/div>
2-21F2C
Diode forward current
Collector power
dissipation
Junction temperature
JEITA
TOSHIBA
W
擄C
擄C
Weight: 9.75 g (typ.)
Storage temperature range
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R
th (j-c)
R
th (j-c)
Max
0.66
1.38
Unit
擄C/W
擄C/W
Equivalent Circuit
Collector
Marking
Part No. (or abbreviation code)
TOSHIBA
Gate
Emitter
GT60M322
Lot No.
JAPAN
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-06

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