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GT5G131 Datasheet

  • GT5G131

  • Strobe Flash Applications

  • 292.03KB

  • 6頁

  • TOSHIBA

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GT5G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G131
Strobe Flash Applications
Unit: mm
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
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3-V gate drive voltage: V
GE
= 3.0 V (min) (@I
C
= 130 A)
Supplied in compact and thin package requires only a small
mounting area
5th generation (trench gate structure) IGBT
Enhancement-mode
Peak collector current: I
C
= 130 A (max)
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Pulse
DC
1 ms
(Note 1)
Symbol
V
CES
V
GES
V
GES
I
C
I
CP
P
C
T
j
T
stg
Rating
400
鹵6
鹵8
5
130
1.1
150
鈭?5~150
2
Unit
V
V
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
A
W
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-6J1C
Note 1: Drive operation: Mount on glass epoxy board [1 inch
脳
1.5 t]
Weight: 0.080 g (typ.)
Equivalent Circuit
8
7
6
5
1
2
3
4
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/碌s.
1
2002-05-17

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