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GT40Q322

TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT

Preliminary

GT40Q322

Unit: mm

Voltage Resonance Inverter Switching Application

鈥?/div>

Enhancement-mode

High speed : t

f

= 0.14 碌s (typ.) (I

C

= 40A)

FRD included between emitter and collector

The 4th generation

TO-3P(N) (Toshiba package name)

Maximum Ratings

(Ta = 25擄C)

Characteristics

Collector-emitter voltage

Gate-emitter voltage

Continuous collector

current

Pulsed collector current

Diode forward current

Collector power

dissipation

Junction temperature

Storage temperature range

DC

Pulsed

@ Tc

=

100擄C

@ Tc

=

25擄C

@ Tc

=

100擄C

@ Tc

=

25擄C

Symbol

V

CES

V

GES

I

C

I

CP

I

F

I

FP

P

C

T

j

T

stg

Rating

1200

鹵25

20

39

80

10

80

200

150

鈭?5

to 150

Unit

V

A

W

擄C

JEDEC

JEITA

TOSHIBA

鈥?/div>

2-16C1C

Weight: 4.6 g (typ.)

Thermal Characteristics

Characteristics

Thermal resistance (IGBT)

Thermal resistance (diode)

Symbol

R

th (j-c)

R

th (j-c)

Max

0.625

1.79

Unit

擄C/W

Equivalent Circuit

Collector

Gate

Emitter

1

2003-07-07

型號(hào)

版本

描述

廠商

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GT40Q322 Datasheet

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