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GT40G121 Datasheet

  • GT40G121

  • TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel ...

  • 5頁(yè)

  • TOSHIBA

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GT40G121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40G121
The 4th Generation
Current Resonance Inverter Switching Applications
Unit: mm
路
路
路
Enhancement-mode
High speed: t
f
= 0.30 碌s (typ.) (I
C
= 60 A)
Low saturation voltage: V
CE (sat)
= 1.8 V (typ.) (I
C
= 60 A)
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
Rating
400
鹵25
40
100
100
150
-55~150
Unit
V
V
A
W
擄C
擄C
Collector power dissipation (Tc
=
25擄C)
Junction temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
TO-220AB
鈥?/div>
2-10P1C
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Thermal resistance
Symbol
I
GES
I
CES
V
GE (OFF)
V
CE (sat)
C
ies
t
r
t
on
t
f
t
off
R
th(j-c)
15 V
0
-15
V
戮
Test Condition
V
GE
= 鹵25
V, V
CE
=
0
V
CE
=
400 V, V
GE
=
0
I
C
=
60 mA, V
CE
=
5 V
I
C
=
60 A, V
GE
=
15 V
V
CE
=
10 V, V
GE
=
0, f
=
1 MHz
3.33
9
39
W
Weight: 2 g (typ.)
Min
戮
戮
3.0
戮
戮
Typ.
戮
戮
戮
1.8
3900
0.33
0.43
0.30
0.54
戮
Max
鹵500
1.0
6.0
2.5
戮
Unit
nA
mA
V
V
pF
戮
戮
戮
戮
戮
戮
戮
0.40
ms
200 V
戮
1.25
擄C/W
1
2003-03-18

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