Pb Free Plating Product
ISSUED DATE :2006/06/13
REVISED DATE :
GT2610
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
90m
3A
Description
The GT2610 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GT2610 is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.60
1.40
0.30
0
0擄
Max.
3.10
3.00
1.80
0.55
0.10
10擄
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@4.5V
Continuous Drain Current
3
, V
GS
@4.5V
Pulsed Drain Current
1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
60
鹵20
3.0
2.3
10
2
0.016
-55 ~ +150
Ratings
62.5
Unit
V
V
A
A
A
W
W/ :
:
Unit
:
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
GT2610
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