GT25Q301 Datasheet

IC型號(hào)：
GT25Q301
PDF描述：
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATI...
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172.22KB
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TOSHIBA

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GT25Q301

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT25Q301

High Power Switching Applications

Motor Control Applications

路

The 3rd generation

Enhancement-mode

High speed: t

= 0.32 碌s (max)

Low saturation voltage: V

CE (sat)

= 2.7 V (max)

FRD included between emitter and collector

Unit: mm

Maximum Ratings

(Ta = 25擄C)

Characteristics

Collector-emitter voltage

Gate-emitter voltage

Collector current

1 ms

Symbol

CES

GES

stg

Rating

1200

鹵20

200

150

鈭?5

to 150

Unit

Diode forward current

JEDEC

JEITA

鈥?/div>

2-21F2C

Collector power dissipation

(Tc = 25擄C)

Junction temperature

Storage temperature range

擄C

TOSHIBA

Weight: 9.75 g (typ.)

Equivalent Circuit

Collector

Gate

Emitter

2003-01-28

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