PZT2222A
NPN Silicon Planar Epitaxial Transistor
COLLECTOR
2, 4
BASE
1
3
EM ITTER
SOT-223
4
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation T
A
=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
Value
40
75
6.0
600
1.5
150
-65 to +150
Unit
Vdc
Vdc
Vdc
Adc
W
C
C
Device Marking
PZT2222A=GT2222A
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC=10 碌Adc, IE=0)
Emitter-Base Breakdown Voltage (IE= 10 碌Adc, IC=0)
Base-Emitter Cutoff Current (VCE= 60 Vdc, VBE =-3.0Vdc)
Collector-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.0Vdc)
Emitter-Base Cutoff Current (VEB= 3.0Vdc, IC =0)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEX
ICEX
IEBO
Min
40
75
6.0
-
-
-
Max
-
-
-
20
10
100
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the
collector lead min. 0.93 inches.
2
WEITRON
http://www.weitron.com.tw
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2
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