GT20J301_06 Datasheet

IC型號：
GT20J301_06
PDF描述：
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
文件大小：
491.76KB
PDF頁數(shù)：
7頁
芯片廠家：
TOSHIBA

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GT20J301

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR

SILICON N CHANNEL IGBT

GT20J301

HIGH POWER SWITCHING APPLICATIONS

MOTOR CONTROL APPLICATIONS

Third-generation IGBT

Enhancement mode type

High speed

Low saturation voltage

: t

= 0.30渭s (Max.)

: V

CE (sat)

= 2.7V (Max.)

Unit: mm

FRD included between emitter and collector

ABSOLUTE MAXIMUM RATINGS

(Ta = 25擄C)

CHARACTERISTIC

Collector鈭扙mitter Voltage

Gate鈭扙mitter Voltage

Collector Current

Emitter鈭扖ollector Forward

Current

Collector Power Dissipation

(Tc = 25擄C)

Junction Temperature

Storage Temperature Range

1ms

SYMBOL

CES

GES

stg

RATING

600

鹵20

130

150

鈭?5~150

UNIT

擄C

JEDEC

JEITA

TOSHIBA

Weight: 4.6 g (typ.)

鈳?/div>

2-16C1C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

EQUIVALENT CIRCUIT

MARKING

TOSHIBA

GT20J301

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-11-01

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