GT20J101_06 Datasheet

IC型號(hào)：
GT20J101_06
PDF描述：
Silicon N Channel IGBT High Power Switching Applications
文件大?。?/label>
191.66KB
PDF頁數(shù)：
6頁
芯片廠家：
TOSHIBA

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GT20J101

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT20J101

High Power Switching Applications

Unit: mm

鈥?/div>

Third-generation IGBT

Enhancement mode type

High speed: t

= 0.30

渭s

(max)

Low saturation voltage: V

CE (sat)

= 2.7 V (max)

Absolute Maximum Ratings

(Ta

25擄C)

Characteristic

Collector-emitter voltage

Gate-emitter voltage

Collector current

Collector power dissipation

(Tc

25擄C)

Junction temperature

Storage temperature range

1 ms

Symbol

CES

GES

stg

Rating

600

鹵20

130

150

鈭?5~150

Unit

擄C

JEDEC

JEITA

鈥?/div>

Note: Using continuously under heavy loads (e.g. the application of high

TOSHIBA

2-16C1C

temperature/current/voltage and the significant change in

Weight: 4.6 g

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Marking

TOSHIBA

GT20J101

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-11-01

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