GT15Q102
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT15Q102
High Power Switching Applications
Unit: mm
The 3rd Generation
Enhancement-Mode
High Speed: t
f
= 0.32 碌s (max)
Low Saturation Voltage: V
CE (sat)
= 2.7 V (max)
路
路
路
路
Maximum Ratings
(Ta
=
25擄C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power dissipation
(Tc
=
25擄C)
Junction temperature
Storage temperature range
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
Rating
1200
鹵20
15
30
170
150
-55~150
Unit
V
V
A
W
擄C
擄C
JEDEC
JEITA
TOSHIBA
Weight: 4.6 g
鈥?/div>
鈥?/div>
2-16C1C
1
2002-01-18
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