鈥?/div>
The 4th generation
FS (fast switching)
Enhancement-mode
High speed: t
f
= 0.03 碌s (typ.)
Low saturation Voltage: V
CE (sat)
= 1.90 V (typ.)
FRD included between emitter and collector.
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc
=
25擄C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
Rating
600
鹵20
15
30
15
30
30
150
鈭?5~150
Unit
V
V
A
JEDEC
A
W
擄C
擄C
鈥?/div>
鈥?/div>
2-10R1C
JEITA
TOSHIBA
Weight: 1.7 g
Equivalent Circuit
Collector
Gate
Emitter
1
2002-01-18
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